|
Title
|
|
|
|
Attracting shallow donors : hydrogen passivation in (Al,Ga,In)-doped ZnO
| |
|
Author
|
|
|
|
| |
|
Abstract
|
|
|
|
| The hydrogen interstitial and the substitutional AlZn, GaZn, and InZn are all shallow donors in ZnO and lead to n-type conductivity. Although shallow donors are expected to repel each other, we show by first-principles calculations that in ZnO these shallow donor impurities attract and form a complex, leading to a donor level deep in the band gap. This puts a limit on the n-type conductivity of (Al,Ga,In)-doped ZnO in the presence of hydrogen. |
| |
|
Language
|
|
|
|
Dutch, English
| |
|
Source (journal)
|
|
|
|
Physical review : B : condensed matter and materials physics. - Lancaster, Pa, 1998 - 2015
| |
|
Publication
|
|
|
|
Lancaster, Pa
:
2012
| |
|
ISSN
|
|
|
|
1098-0121
[print]
1550-235X
[online]
| |
|
DOI
|
|
|
|
10.1103/PHYSREVB.86.165207
| |
|
Volume/pages
|
|
|
|
86
:16
(2012)
, 4 p.
| |
|
Article Reference
|
|
|
|
165207
| |
|
ISI
|
|
|
|
000310131300008
| |
|
Medium
|
|
|
|
E-only publicatie
| |
|
Full text (Publisher's DOI)
|
|
|
|
| |
|
Full text (open access)
|
|
|
|
| |
|