Title
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Attracting shallow donors : hydrogen passivation in (Al,Ga,In)-doped ZnO
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Author
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Abstract
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The hydrogen interstitial and the substitutional AlZn, GaZn, and InZn are all shallow donors in ZnO and lead to n-type conductivity. Although shallow donors are expected to repel each other, we show by first-principles calculations that in ZnO these shallow donor impurities attract and form a complex, leading to a donor level deep in the band gap. This puts a limit on the n-type conductivity of (Al,Ga,In)-doped ZnO in the presence of hydrogen. |
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Language
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Dutch, English
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Source (journal)
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Physical review : B : condensed matter and materials physics. - Lancaster, Pa, 1998 - 2015
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Publication
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Lancaster, Pa
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2012
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ISSN
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1098-0121
[print]
1550-235X
[online]
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DOI
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10.1103/PHYSREVB.86.165207
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Volume/pages
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86
:16
(2012)
, 4 p.
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Article Reference
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165207
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ISI
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000310131300008
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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Full text (open access)
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