Title
Attracting shallow donors : hydrogen passivation in (Al,Ga,In)-doped ZnO Attracting shallow donors : hydrogen passivation in (Al,Ga,In)-doped ZnO
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Lancaster, Pa ,
Subject
Physics
Source (journal)
Physical review : B : condensed matter and materials physics. - Lancaster, Pa, 1998 - 2015
Volume/pages
86(2012) :16 , 4 p.
ISSN
1098-0121
Article Reference
165207
ISI
000310131300008
Carrier
E-only publicatie
Target language
Dutch (dut)
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
The hydrogen interstitial and the substitutional AlZn, GaZn, and InZn are all shallow donors in ZnO and lead to n-type conductivity. Although shallow donors are expected to repel each other, we show by first-principles calculations that in ZnO these shallow donor impurities attract and form a complex, leading to a donor level deep in the band gap. This puts a limit on the n-type conductivity of (Al,Ga,In)-doped ZnO in the presence of hydrogen.
Full text (open access)
https://repository.uantwerpen.be/docman/irua/b8aa73/518eac76.pdf
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