Title
Free-standing Si and Ge, and Ge/Si core-shell semiconductor nanowires Free-standing Si and Ge, and Ge/Si core-shell semiconductor nanowires
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Warszawa ,
Subject
Physics
Source (journal)
Acta physica Polonica: A: general physics, solid state physics, applied physics. - Warszawa
Source (book)
WELCOME Scientific Meeting on Hybrid Nanostructures, AUG 28-31, 2011, Torun, POLAND
Volume/pages
122(2012) :2 , p. 294-298
ISSN
0587-4246
ISI
000308453900012
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
The properties of free-standing silicon and germanium nanowires oriented along the [110] direction are studied using different first principles methods. We show the corrections due to quasi-particles to the band structures obtained using the local-density approximation. The formation energies of B and P doped nanowires are calculated, both in the absence and presence of dangling bond defects and we link these to experimental results. Furthermore, we report on the phonon properties of pure Si and Ge nanowires, as well as Ge/Si core-shell nanowires, and discuss the differences between them.
Full text (open access)
https://repository.uantwerpen.be/docman/irua/762997/3445.pdf
E-info
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000308453900012&DestLinkType=RelatedRecords&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000308453900012&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848
Handle