Publication
Title
Free-standing Si and Ge, and Ge/Si core-shell semiconductor nanowires
Author
Abstract
The properties of free-standing silicon and germanium nanowires oriented along the [110] direction are studied using different first principles methods. We show the corrections due to quasi-particles to the band structures obtained using the local-density approximation. The formation energies of B and P doped nanowires are calculated, both in the absence and presence of dangling bond defects and we link these to experimental results. Furthermore, we report on the phonon properties of pure Si and Ge nanowires, as well as Ge/Si core-shell nanowires, and discuss the differences between them.
Language
English
Source (journal)
Acta physica Polonica: A: general physics, solid state physics, applied physics. - Warszawa
Source (book)
WELCOME Scientific Meeting on Hybrid Nanostructures, AUG 28-31, 2011, Torun, POLAND
Publication
Warszawa : 2012
ISSN
0587-4246
Volume/pages
122:2(2012), p. 294-298
ISI
000308453900012
Full text (Publisher's DOI)
Full text (open access)
UAntwerpen
Faculty/Department
Research group
[E?say:metaLocaldata.cgzprojectinf]
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 22.11.2012
Last edited 14.11.2017
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