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Title
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Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in intercalated heterostructures
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Author
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Abstract
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| Hydrogen incorporation in diluted nitride semiconductors dramatically modifies the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. We report a convergent beam electron-diffraction characterization of diluted nitride semiconductor-heterostructures patterned at a sub-micron scale and selectively exposed to hydrogen. We present a method to determine separately perpendicular mismatch and static disorder in pristine and hydrogenated heterostructures. The roles of chemical composition and strain on static disorder have been separately assessed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752464] |
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Language
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English
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Source (journal)
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Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
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Publication
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New York, N.Y.
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American Institute of Physics
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2012
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ISSN
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0003-6951
[print]
1077-3118
[online]
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DOI
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10.1063/1.4752464
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Volume/pages
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101
:11
(2012)
, p. 1-4
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Article Reference
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111912
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ISI
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000309329300033
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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