Publication
Title
Gas ratio effects on the Si etch rate and profile uniformity in an inductively coupled plasma
Author
Abstract
Language
English
Source (journal)
Plasma sources science and technology / Institute of Physics [Londen] - Bristol, 1992, currens
Publication
Bristol : Institute of Physics, 2013
ISSN
0963-0252
Volume/pages
22:1(2013), p. 1-18
Article Reference
015017
ISI
000314966300022
Medium
E-only publicatie
Full text (Publisher's DOI)
Full text (publisher's version - intranet only)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 02.01.2013
Last edited 09.10.2018
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