CdSe quantum dot formation induced by amorphous SeCdSe quantum dot formation induced by amorphous Se
Faculty of Sciences. Physics
Electron microscopy for materials research (EMAT)
Surface science: a journal devoted to the physics and chemistry of interfaces. - Amsterdam
International Conference on NANO-Structures Self Assembling, JUL 02-06, 2006, Aix en Provence, FRANCE
601(2007):13, p. 2664-2666
University of Antwerp
The mechanism allowing the transition from a two-dimensional strained layer of CdSe on ZnSe to self-assembled islands induced by the use of amorphous selenium is still not fully understood. For a better understanding, atomic force microscopy and transmission electron microscopy studies were performed on CdSe films with a thickness close to that for quantum dot formation. Below this thickness, the sample surface results in undulations along the  crystal direction, while few quantum dots are situated in the wave valleys. Plan view transmission electron microscopy studies reveal a strong anisotropy of the islands and show that the Se desorption conditions are crucial. (C) 2006 Elsevier B.V. All rights reserved.