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Title
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CdSe quantum dot formation induced by amorphous Se
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Author
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Abstract
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| The mechanism allowing the transition from a two-dimensional strained layer of CdSe on ZnSe to self-assembled islands induced by the use of amorphous selenium is still not fully understood. For a better understanding, atomic force microscopy and transmission electron microscopy studies were performed on CdSe films with a thickness close to that for quantum dot formation. Below this thickness, the sample surface results in undulations along the [110] crystal direction, while few quantum dots are situated in the wave valleys. Plan view transmission electron microscopy studies reveal a strong anisotropy of the islands and show that the Se desorption conditions are crucial. (C) 2006 Elsevier B.V. All rights reserved. |
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Language
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English
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Source (journal)
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Surface science : a journal devoted to the physics and chemistry of interfaces. - Amsterdam, 1964, currens
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Source (book)
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International Conference on NANO-Structures Self Assembling, JUL 02-06, 2006, Aix en Provence, FRANCE
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Publication
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Amsterdam
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2007
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ISSN
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0039-6028
[print]
1879-2758
[online]
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DOI
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10.1016/J.SUSC.2006.12.001
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Volume/pages
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601
:13
(2007)
, p. 2664-2666
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ISI
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000248030100027
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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