Publication
Title
CdSe quantum dot formation induced by amorphous Se
Author
Abstract
The mechanism allowing the transition from a two-dimensional strained layer of CdSe on ZnSe to self-assembled islands induced by the use of amorphous selenium is still not fully understood. For a better understanding, atomic force microscopy and transmission electron microscopy studies were performed on CdSe films with a thickness close to that for quantum dot formation. Below this thickness, the sample surface results in undulations along the [110] crystal direction, while few quantum dots are situated in the wave valleys. Plan view transmission electron microscopy studies reveal a strong anisotropy of the islands and show that the Se desorption conditions are crucial. (C) 2006 Elsevier B.V. All rights reserved.
Language
English
Source (journal)
Surface science: a journal devoted to the physics and chemistry of interfaces. - Amsterdam
Source (book)
International Conference on NANO-Structures Self Assembling, JUL 02-06, 2006, Aix en Provence, FRANCE
Publication
Amsterdam : 2007
ISSN
0039-6028
Volume/pages
601:13(2007), p. 2664-2666
ISI
000248030100027
Full text (Publishers DOI)
Full text (publishers version - intranet only)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 03.01.2013
Last edited 03.05.2017
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