Publication
Title
Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility
Author
Abstract
The electron wave functions in the inversion layer are analyzed in the case where the dielectric barriers are not infinite. This forces the electron concentration closer to the interface silicon/oxide and reduces the subband energy. This treatment of the inversion layer is extended to the calculation of the electron mobility degradation due to remote Coulomb scattering on a high-k dielectric stacked transistor. The subband energy reduction leads to a decrease of the scattering charge needed to explain the experimental results. This model can also fit better the experimental data when compared with the case where no barrier permeation is considered.
Language
English
Source (journal)
Microelectronic engineering. - Amsterdam
Publication
Amsterdam : 2005
ISSN
0167-9317
Volume/pages
80(2005), p. 82-85
ISI
000231517000021
Full text (Publisher's DOI)
Full text (publisher's version - intranet only)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 03.01.2013
Last edited 20.11.2017
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