Title
Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Amsterdam ,
Subject
Physics
Engineering sciences. Technology
Source (journal)
Microelectronic engineering. - Amsterdam
Volume/pages
80(2005) , p. 82-85
ISSN
0167-9317
ISI
000231517000021
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
The electron wave functions in the inversion layer are analyzed in the case where the dielectric barriers are not infinite. This forces the electron concentration closer to the interface silicon/oxide and reduces the subband energy. This treatment of the inversion layer is extended to the calculation of the electron mobility degradation due to remote Coulomb scattering on a high-k dielectric stacked transistor. The subband energy reduction leads to a decrease of the scattering charge needed to explain the experimental results. This model can also fit better the experimental data when compared with the case where no barrier permeation is considered.
E-info
https://repository.uantwerpen.be/docman/iruaauth/2717ff/0594140.pdf
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