Title
Non-thermodynamic approach to including bombardment-induced post-cascade redistribution of point defects in dynamic Monte Carlo code Non-thermodynamic approach to including bombardment-induced post-cascade redistribution of point defects in dynamic Monte Carlo code
Author
Faculty/Department
Faculty of Sciences. Chemistry
Publication type
article
Publication
Amsterdam ,
Subject
Physics
Engineering sciences. Technology
Source (journal)
Interactions with materials and atoms
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms. - Amsterdam
Source (book)
6th International Conference on Computer Simulation of Radiation Effects in Solids, JUN 23-27, 2002, DRESDEN, GERMANY
Volume/pages
202(2003) , p. 24-30
ISSN
0168-583X
ISI
000182122500006
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
The redistribution of the elements as a result of atomic relocations produced by the ions and the recoils due to the ballistic and transport processes is investigated by making use of a dynamic Monte Carlo code. Phenomena, such as radiation-enhanced diffusion (RED) and bombardment-induced segregation (BIS) triggered by the ion bombardment may also contribute to the migration of atoms within the target. In order to include both RED and BIS in the code, we suggest an approach which is considered as an extension of the binary collision approximation, i.e. it takes place "simultaneously" with the cascade and acts as a correction to the particle redistribution for low energies. Both RED and BIS models are based on the common approach to treat the transport processes as a result of a random migration of point defects (vacancies and interstitials) according to a probability given by a pre-defined Gaussian. The models are tested and the influence of the diffusion and segregation is illustrated in the cases of 12 keV Sb-121(+) implantation at low fluence in SiO2/Si substrate and of self-sputtering of Ga+ ions during profiling of SiO2/Si interfaces. (C) 2002 Elsevier Science B.V. All rights reserved.
E-info
https://repository.uantwerpen.be/docman/iruaauth/696c78/4554618.pdf
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000182122500006&DestLinkType=RelatedRecords&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000182122500006&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000182122500006&DestLinkType=CitingArticles&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848
Handle