Title
Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Amsterdam ,
Subject
Physics
Source (journal)
Physica: B: condensed matter. - Amsterdam
Source (book)
20th International Conference on Defects in Semiconductors (ICDS-20), JUL 26-30, 1999, BERKELEY, CA
Volume/pages
273-4(1999) , p. 140-143
ISSN
0921-4526
ISI
000084452200031
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
Experimental results show that the room-temperature carrier mobility in bulk layers of undoped or Si-doped GaN grown by LP-MOVPE on sapphire substrate shows a sudden increase as soon as the carrier density exceeds a critical value of about 10(18) cm(-3). We show that such a behavior can be theoretically reproduced by assuming that the columnar structure i.e. the dislocation microstructure is responsible for internal electronic barriers. (C) 1999 Elsevier Science B.V. All rights reserved.
E-info
https://repository.uantwerpen.be/docman/iruaauth/d156a2/2ef4769.pdf
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