Publication
Title
Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE
Author
Abstract
Language
English
Source (journal)
Physica: B: condensed matter. - Amsterdam
Source (book)
20th International Conference on Defects in Semiconductors (ICDS-20), JUL 26-30, 1999, BERKELEY, CA
Publication
Amsterdam : 1999
ISSN
0921-4526
Volume/pages
273-4(1999), p. 140-143
ISI
000084452200031
Full text (Publisher's DOI)
Full text (publisher's version - intranet only)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 03.01.2013
Last edited 19.11.2018
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