Title
|
|
|
|
Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE
|
|
Author
|
|
|
|
|
|
Abstract
|
|
|
|
Experimental results show that the room-temperature carrier mobility in bulk layers of undoped or Si-doped GaN grown by LP-MOVPE on sapphire substrate shows a sudden increase as soon as the carrier density exceeds a critical value of about 10(18) cm(-3). We show that such a behavior can be theoretically reproduced by assuming that the columnar structure i.e. the dislocation microstructure is responsible for internal electronic barriers. (C) 1999 Elsevier Science B.V. All rights reserved. |
|
|
Language
|
|
|
|
English
|
|
Source (journal)
|
|
|
|
Physica: B : condensed matter. - Amsterdam, 1998, currens
|
|
Source (book)
|
|
|
|
20th International Conference on Defects in Semiconductors (ICDS-20), JUL 26-30, 1999, BERKELEY, CA
|
|
Publication
|
|
|
|
Amsterdam
:
North-Holland
,
1999
|
|
ISSN
|
|
|
|
0921-4526
[print]
1873-2135
[online]
|
|
DOI
|
|
|
|
10.1016/S0921-4526(99)00431-7
|
|
Volume/pages
|
|
|
|
273-4
(1999)
, p. 140-143
|
|
ISI
|
|
|
|
000084452200031
|
|
Full text (Publisher's DOI)
|
|
|
|
|
|
Full text (publisher's version - intranet only)
|
|
|
|
|
|