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Title
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Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE
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Author
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Abstract
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| Experimental results show that the room-temperature carrier mobility in bulk layers of undoped or Si-doped GaN grown by LP-MOVPE on sapphire substrate shows a sudden increase as soon as the carrier density exceeds a critical value of about 10(18) cm(-3). We show that such a behavior can be theoretically reproduced by assuming that the columnar structure i.e. the dislocation microstructure is responsible for internal electronic barriers. (C) 1999 Elsevier Science B.V. All rights reserved. |
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Language
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English
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Source (journal)
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Physica: B : condensed matter. - Amsterdam, 1998, currens
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Source (book)
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20th International Conference on Defects in Semiconductors (ICDS-20), JUL 26-30, 1999, BERKELEY, CA
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Publication
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Amsterdam
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North-Holland
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1999
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ISSN
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0921-4526
[print]
1873-2135
[online]
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DOI
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10.1016/S0921-4526(99)00431-7
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Volume/pages
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273-4
(1999)
, p. 140-143
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ISI
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000084452200031
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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