Title
Growth of pure and doped <tex>$Rb_{2}ZnCl_{4}$</tex>and <tex>$K_{2}ZnCl_{4}$</tex> single crystals by Czochralski techniqueGrowth of pure and doped <tex>$Rb_{2}ZnCl_{4}$</tex>and <tex>$K_{2}ZnCl_{4}$</tex> single crystals by Czochralski technique
Author
Faculty/Department
Faculty of Sciences. Physics
Research group
Electron microscopy for materials research (EMAT)
Publication type
article
Publication
Amsterdam,
Subject
Physics
Chemistry
Source (journal)
Journal of crystal growth. - Amsterdam
Volume/pages
200(1999):1-2, p. 148-154
ISSN
0022-0248
ISI
000079840600021
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
High-quality single crystals of Rb2ZnCl4 and K2ZnCl4, pure or doped with Cu, Mn, Cd, Tl, Sn, Pb and In cations, were grown by Czochralski technique in argon atmosphere, using an experimental setup that allows direct visual access to the whole growth zone. Slowly cooled crystals exhibit excellent cleavage properties. Fastly cooled crystals do cleave poorly. As shown by X-ray diffraction studies, such K2ZnCl4 samples exhibit inclusions of the high-temperature Pmcn phase with lattice parameters a = 7.263(2) Angstrom, b = 12.562(2) Angstrom and c = 8.960(4) Angstrom in the P2(1) cn room temperature stable phase. ESR and optical spectroscopy studies revealed the localization and valence state of the cation dopants. (C) 1999 Elsevier Science B.V. All rights reserved.
E-info
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