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Clustering of vacancies on {113} planes in Si layers close to Si- interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation
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| Author |
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| Abstract |
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| In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation. | | |
| Language |
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English
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| Source (journal) |
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CONFERENCE SERIES- INSTITUTE OF PHYSICS | |
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Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND | |
| Publication |
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1999
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| ISBN |
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0-7503-0650-5
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| Volume/pages |
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164(1999), p. 495-498
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| ISI |
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000166835300106
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