Publication
Title
Clustering of vacancies on {113} planes in Si layers close to Si-$Si_{3}N_{4}$ interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation
Author
Abstract
 In situ HREM irradiation of (110) FZ-Si crystals covered with thin Si3N4 films was carried out in a JEOL-4000EX microscope, operated at 400 keV at room temperature. It is found that clustering of vacancies on (113) planes is realised in a Si layer close to the Si-Si3N4 interface at the initial stage of irradiation. Further aggregation of self-interstitials inside vacancy clusters is considered as an alternative way of point defect recombination in extended shape, to be accomplished with the formation of the extended defects of interstitial type upon interstitial supersaturation.
Language
English
Source (journal)
CONFERENCE SERIES- INSTITUTE OF PHYSICS
Source (book)
Conference on Microscopy of Semiconducting Materials, MAR 22-25, 1999, UNIV OXFORD, OXFORD, ENGLAND
Publication
1999
ISBN
0-7503-0650-5
Volume/pages
164(1999), p. 495-498
ISI
000166835300106
UAntwerpen
 Faculty/Department Research group Publication type Subject