|
Title
|
|
|
|
Hetero-epitaxial growth of thin films on Si(100) : template effects and epitaxial orientations
|
|
|
Author
|
|
|
|
|
|
|
Abstract
|
|
|
|
| This HREM investigation focuses on the influence of point defects on the final epitaxial relation and atomic interface configuration in a CoSi2/Si(1 0 0) heterostructure. A two-step SPE-MBE grown CoSi2/Si(1 0 0) system is used and, by altering the number of deposited Co monolayers in the template layer, the point defect behavior is studied. We propose a film growth model in which the knowledge about the reconstructed (2 x 1) : Si(1 0 0) surface, the point defect behavior in the presence of an interface, especially a silicide interface, the migration of point defects through a lattice by formation of [1 0 0]-split interstitial (dumbbell) atomic configurations, and a new type of extended defect configurations in diamond type materials will all amalgamate. (C) 1998 Published by Elsevier Science B.V. All rights reserved. |
|
|
|
Language
|
|
|
|
English
|
|
|
Source (journal)
|
|
|
|
Journal of crystal growth. - Amsterdam
|
|
|
Publication
|
|
|
|
Amsterdam
:
1998
|
|
|
ISSN
|
|
|
|
0022-0248
|
|
|
Volume/pages
|
|
|
|
191
:3
(1998)
, p. 430-438
|
|
|
ISI
|
|
|
|
000075032500017
|
|
|
Full text (Publisher's DOI)
|
|
|
|
|
|
|
Full text (publisher's version - intranet only)
|
|
|
|
|
|