Title
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Hetero-epitaxial growth of thin films on Si(100) : template effects and epitaxial orientations
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Author
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Abstract
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This HREM investigation focuses on the influence of point defects on the final epitaxial relation and atomic interface configuration in a CoSi2/Si(1 0 0) heterostructure. A two-step SPE-MBE grown CoSi2/Si(1 0 0) system is used and, by altering the number of deposited Co monolayers in the template layer, the point defect behavior is studied. We propose a film growth model in which the knowledge about the reconstructed (2 x 1) : Si(1 0 0) surface, the point defect behavior in the presence of an interface, especially a silicide interface, the migration of point defects through a lattice by formation of [1 0 0]-split interstitial (dumbbell) atomic configurations, and a new type of extended defect configurations in diamond type materials will all amalgamate. (C) 1998 Published by Elsevier Science B.V. All rights reserved. |
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Language
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English
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Source (journal)
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Journal of crystal growth. - Amsterdam
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Publication
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Amsterdam
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1998
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ISSN
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0022-0248
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Volume/pages
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191
:3
(1998)
, p. 430-438
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ISI
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000075032500017
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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