Title
Mechanisms of double magnetic exchange in dilute magnetic semiconductors Mechanisms of double magnetic exchange in dilute magnetic semiconductors
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Amsterdam ,
Subject
Physics
Source (journal)
Journal of magnetism and magnetic materials. - Amsterdam
Source (book)
International Conference on Magnetism (ICM 2003), JUL 27-AUG 01, 2003, Rome, ITALY
Volume/pages
272(2004) :Part 3 , p. 1967-1968
ISSN
0304-8853
ISI
000222236800142
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
A microscopic Hamiltonian for interacting manganese impurities in dilute magnetic semiconductors (DMS) is derived. It is shown that in p-type III-V DMS, the indirect exchange between Mn impurities has similarities with the Zener mechanism in transition metal oxides. Here the mobile and localized holes near the top of the valence band play the role of unoccupied p-orbitals which induce ferromagnetism. T-C estimated from the proposed kinematic exchange agrees with experiments on (Ga,Mn)As. The model is also applicable to the p-doped (Ga,Mn)P system. The magnetic ordering in n-type (Ga,Mn)N is due to exchange between the electrons localized on the levels lying deep in the forbidden energy gap. This mechanism is even closer to the original Zener mechanism. (C) 2003 Elsevier B.V. All rights reserved.
E-info
https://repository.uantwerpen.be/docman/iruaauth/c8e4a4/a845843.pdf
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