Exciton-phonon coupled states in <script type="math/tex">CdTe/Cd_{1-x}Zn_{x}Te</script> quantum dots

El Moussaouy, A.; Bria, D.; Nougauoi, A.; Charrour, R.; Bouhassoune, M.

doi:10.1063/1.1540740

Title

Exciton-phonon coupled states in $CdTe/Cd_{1-x}Zn_{x}Te$ quantum dots

Author

El Moussaouy, A.

Bria, D.

Nougauoi, A.

Charrour, R.

Bouhassoune, M.

Abstract

This article presents a theoretical analysis of the dependence of the exciton binding energy and exciton-LO-phonon coupling on the cylindrical quantum dot (QD) size. The effect of the temperature on the integrated photoluminescence line intensity is also investigated. Calculations were performed within the effective-mass approximation by using a variational method. Specific applications of these results are given for CdTe QDs embedded in a Cd1-xZnxTe matrix. The excitonic confinement is described by a finite, deep potential well. We observe, on the one-hand, an enhancement of the exciton binding energy and the exciton-LO-phonon coupling energy with decreasing dot size. On the other hand, at high temperature, the LO phonon has a noticeable effect on the photoluminescence intensity. This last physical parameter also shows a great dependence on QD size and on the potential level induced by the barrier material. (C) 2003 American Institute of Physics.

Language

English

Source (journal)

Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens

Publication

New York, N.Y. : American Institute of Physics , 2003

ISSN

0021-8979 [print]

1089-7550 [online]

DOI

10.1063/1.1540740

Volume/pages