Title
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On the nature of ferromagnetism in diluted magnetic semiconductors : GaAs:Mn
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Author
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Abstract
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An energy level diagram is constructed on the basis of a microscopic Hamiltonian proposed for a description of interacting manganese impurities in diluted magnetic semiconductors (DMS). It is shown that ferromagnetism in p-type III-V DMS is governed by the strong hybridization of Mn2+-electrons with the mobile holes and localized states near the top of the valence band. The Curie temperature estimated from the proposed kinematic exchange agrees with the experiments on GaAs:Mn. The model is also applicable to the GaP:Mn system. |
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Language
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English
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Source (journal)
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Europhysics letters / Société européenne de physique. - Les Ulis, 1986, currens
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Publication
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Les Ulis
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Les éditions de physique
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2003
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ISSN
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0295-5075
1286-4854
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DOI
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10.1209/EPL/I2003-00224-X
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Volume/pages
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61
:2
(2003)
, p. 235-241
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ISI
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000180283200015
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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