Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques

Gryse, O.D.; Clauws, P.; van Landuyt, J.; Lebedev, O.; Claeys, C.; Simoen, E.; Vanhellemont, J.

doi:10.1063/1.1429800

Title

Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques

Author

Gryse, O.D.

Clauws, P.

van Landuyt, J.

Lebedev, O.

Claeys, C.

Simoen, E.

Vanhellemont, J.

Abstract

Infrared absorption spectra of polyhedral and platelet oxygen precipitates in silicon are analyzed using a modified Day-Thorpe approach [J. Phys.: Condens. Matter 11, 2551 (1999)]. The aspect ratio of the precipitates is determined by transmission electron microscopy analysis. The reduced spectral function and the stoichiometry of the precipitate are extracted from the absorption spectra and the amount of precipitated interstitial oxygen. The experimental absorption spectra can be divided in a set with a Frohlich frequency of around 1100 cm(-1) and in a set with a Frohlich frequency between 1110 and 1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a differing stoichiometry, but to the detailed structure of the reduced spectral function. Inverse modeling of the spectra suggests that the oxide precipitates consist of substoichiometric SiOgamma with gamma=1.17+/-0.14. (C) 2002 American Institute of Physics.

Language

English

Source (journal)

Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens

Publication

New York, N.Y. : American Institute of Physics , 2002

ISSN

0021-8979 [print]

1089-7550 [online]

DOI

10.1063/1.1429800

Volume/pages