Title
Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Amsterdam :Elsevier science bv ,
Subject
Physics
Source (journal)
Physica: B: condensed matter. - Amsterdam
Source (book)
21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY
Volume/pages
308(2001) , p. 294-297
ISSN
0921-4526
ISI
000173660100073
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
Infrared absorption spectra of polyhedral and platelet oxygen precipitates are analyzed using a modified Day-Thorpe approach (J. Phys.: Condens. Matter 11 (1999) 2551). The aspect ratio has been determined by TEM measurements. The reduced spectral function and the stoichiometry are extracted from the absorption spectra and the concentration of precipitated interstitial oxygen. One set of spectra reveal a Frohlich frequency around 1100 cm(-1) and another around 1110-1120 cm(-1). It is shown that the shift in the Frohlich frequency is not due to a different stoichiometry, but due to the detailed structure in the reduced spectral function. The oxygen precipitates consist of SiO. with gammaapproximate to1.1-1.2+/-0.1. (C) 2001 Elsevier Science B.V. All rights reserved.
E-info
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