Publication
Title
Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures
Author
Abstract
Convergent beam electron diffraction (CBED) is used in this study to investigate the stress distribution around shallow trench isolation (STI) structures. Attention is given to the influence of the different processing parameters and the width and spacing of the structures. The use of a wet or a dry pregate oxidation is found to have a strong influence on the stress behavior. Isolated lines show more stress, leading to the formation of defects in the silicon substrate if a wet pregate oxidation is used. The CBED analyses are compared with micro-Raman and bright-field transmission electron microscopy measurements. (C) 2001 The Electrochemical Society.
Language
English
Source (journal)
Journal of the electrochemical society. - New York, N.Y.
Publication
New York, N.Y. : 2001
ISSN
0013-4651
Volume/pages
148:11(2001), p. G597-G601
ISI
000171653100038
Full text (Publishers DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 03.01.2013
Last edited 25.04.2017
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