Title
Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
New York, N.Y. ,
Subject
Physics
Chemistry
Source (journal)
Journal of the electrochemical society. - New York, N.Y.
Volume/pages
148(2001) :11 , p. G597-G601
ISSN
0013-4651
ISI
000171653100038
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
Convergent beam electron diffraction (CBED) is used in this study to investigate the stress distribution around shallow trench isolation (STI) structures. Attention is given to the influence of the different processing parameters and the width and spacing of the structures. The use of a wet or a dry pregate oxidation is found to have a strong influence on the stress behavior. Isolated lines show more stress, leading to the formation of defects in the silicon substrate if a wet pregate oxidation is used. The CBED analyses are compared with micro-Raman and bright-field transmission electron microscopy measurements. (C) 2001 The Electrochemical Society.
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