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Title
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Tunneling spectroscopy in Fe-GaN-Fe trilayer structures grown by MBE using ECR microwave plasma nitrogen source
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Author
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Abstract
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| Epitaxy of Fe on GaAs by the MBE technique has a long tradition in magnetism research. This paper deals with the growth of epitaxial Fe-GaN-Fe trilayer structures whose intriguing magnetic properties were exploited for the evaluation of GaN as a spin-dependent tunneling barrier. The trilayers were grown on semi-insulating (0 0 1) GaAs using an ultra-high vacuum deposition chamber equipped with electron cyclotron resonance (ECR) microwave plasma nitrogen source. (C) 2001 Elsevier Science B.V. All rights reserved. |
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Language
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English
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Source (journal)
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Journal of crystal growth. - Amsterdam
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Source (book)
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11th International Conference on Molecular Beam Epitaxy (MBE-XI), SEP 11-15, 2000, BEIJING, PEOPLES R CHINA
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Publication
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Amsterdam
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Elsevier science bv
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2001
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ISSN
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0022-0248
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DOI
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10.1016/S0022-0248(01)00923-X
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Volume/pages
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227
(2001)
, p. 888-892
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ISI
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000169557600171
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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