Publication
Title
Tunneling spectroscopy in Fe-GaN-Fe trilayer structures grown by MBE using ECR microwave plasma nitrogen source
Author
Abstract
Epitaxy of Fe on GaAs by the MBE technique has a long tradition in magnetism research. This paper deals with the growth of epitaxial Fe-GaN-Fe trilayer structures whose intriguing magnetic properties were exploited for the evaluation of GaN as a spin-dependent tunneling barrier. The trilayers were grown on semi-insulating (0 0 1) GaAs using an ultra-high vacuum deposition chamber equipped with electron cyclotron resonance (ECR) microwave plasma nitrogen source. (C) 2001 Elsevier Science B.V. All rights reserved.
Language
English
Source (journal)
Journal of crystal growth. - Amsterdam
Source (book)
11th International Conference on Molecular Beam Epitaxy (MBE-XI), SEP 11-15, 2000, BEIJING, PEOPLES R CHINA
Publication
Amsterdam : Elsevier science bv, 2001
ISSN
0022-0248
Volume/pages
227(2001), p. 888-892
ISI
000169557600171
Full text (Publisher's DOI)
Full text (publisher's version - intranet only)
UAntwerpen
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 03.01.2013
Last edited 10.08.2017
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