EFTEM study of plasma etched low-k Si-O-C dielectricsEFTEM study of plasma etched low-k Si-O-C dielectrics
Faculty of Sciences. Physics
Electron microscopy for materials research (EMAT)
CONFERENCE SERIES- INSTITUTE OF PHYSICS
Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND
(2001):169, p. 415-418
University of Antwerp
Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions.