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EFTEM study of plasma etched low-k Si-O-C dielectrics
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| Abstract |
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| Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions. |
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| Language |
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English
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| Source (journal) |
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CONFERENCE SERIES- INSTITUTE OF PHYSICS | |
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Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND | |
| Publication |
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2001
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| ISBN |
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0-7503-0818-4
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| Volume/pages |
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169(2001), p. 415-418
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| ISI |
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000176465200088
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