Publication
Title
EFTEM study of plasma etched low-k Si-O-C dielectrics
Author
Abstract
Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions.
Language
English
Source (journal)
CONFERENCE SERIES- INSTITUTE OF PHYSICS
Source (book)
Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND
Publication
2001
ISBN
0-7503-0818-4
Volume/pages
169(2001), p. 415-418
ISI
000176465200088
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 03.01.2013
Last edited 02.09.2017
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