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Title
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Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer
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Author
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Abstract
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| We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen. (C) 2000 American Institute of Physics. [S0003-6951(00)00930-X]. |
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Language
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English
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Source (journal)
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Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
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Publication
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New York, N.Y.
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American Institute of Physics
,
2000
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ISSN
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0003-6951
[print]
1077-3118
[online]
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DOI
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10.1063/1.127026
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Volume/pages
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77
:4
(2000)
, p. 507-509
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ISI
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000088225400016
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Full text (Publisher's DOI)
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