| Title |
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Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
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| Author |
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| Abstract |
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| Language |
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English
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| Source (journal) |
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Internet journal of nitride semiconductor research. - - |
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| Source (book) |
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Symposium on GaN and Related Alloys Held at the MRS Fall Meeting, NOV 29-DEC 03, 1999, BOSTON, MASSACHUSETTS |
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| Publication |
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Warrendale : Materials research society, 2000
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| ISSN |
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1092-5783
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| Volume/pages |
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5:s:[1](2000), p. art. no.-W11.38
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| ISI |
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000090103600097
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| Full text (publisher's version - intranet only) |
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