| Title |
|
|
|
Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon
| |
| Author |
|
|
|
| |
| Abstract |
|
|
|
| A method has been developed to determine the interstitial and precipitated oxygen concentration in highly doped n- and p-type silicon. 10-30-mu m-thin silicon samples in a mechanical stress-free state and without alteration of the thermal history are prepared and measured with Fourier transform infrared spectroscopy at 5.5-6 K. The measured oxygen contents in the as-grown Si samples agree well with those obtained with gas fusion analysis. In the highly boron-doped samples, the interstitial oxygen can be determined down to 10(17) cm(-3). (C) 1999 American Institute of Physics. [S0034-6748(99)04909-6]. | | |
| Language |
|
|
|
English
| |
| Source (journal) |
|
|
|
The review of scientific instruments. - New York, N.Y. | |
| Publication |
|
|
|
New York, N.Y. : 1999
| |
| ISSN |
|
|
|
0034-6748
| |
| Volume/pages |
|
|
|
70:9(1999), p. 3661-3663
| |
| ISI |
|
|
|
000082289200026
| |
| Full text (Publisher's DOI) |
|
|
| | |
|