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Title
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Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon
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Author
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Abstract
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| A method has been developed to determine the interstitial and precipitated oxygen concentration in highly doped n- and p-type silicon. 10-30-mu m-thin silicon samples in a mechanical stress-free state and without alteration of the thermal history are prepared and measured with Fourier transform infrared spectroscopy at 5.5-6 K. The measured oxygen contents in the as-grown Si samples agree well with those obtained with gas fusion analysis. In the highly boron-doped samples, the interstitial oxygen can be determined down to 10(17) cm(-3). (C) 1999 American Institute of Physics. [S0034-6748(99)04909-6]. |
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Language
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English
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Source (journal)
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The review of scientific instruments. - New York, N.Y.
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Publication
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New York, N.Y.
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1999
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ISSN
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0034-6748
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DOI
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10.1063/1.1149974
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Volume/pages
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70
:9
(1999)
, p. 3661-3663
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ISI
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000082289200026
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Full text (Publisher's DOI)
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