| Title |
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Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon
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| Author |
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| Abstract |
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| Language |
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English
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| Source (journal) |
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The review of scientific instruments. - New York, N.Y. | |
| Publication |
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New York, N.Y. : 1999
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| ISSN |
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0034-6748
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| Volume/pages |
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70:9(1999), p. 3661-3663
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| ISI |
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000082289200026
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| Full text (Publisher's DOI) |
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