Title
A comprehensive model to accurately calculate the gate capacitance and the leakage from DC to 100 MHz for ultra thin dielectricsA comprehensive model to accurately calculate the gate capacitance and the leakage from DC to 100 MHz for ultra thin dielectrics
Author
Publication type
conferenceObject
Publication
Source (journal)
ICMTS 2006: Proceedings of the 2006 International Conference on Microelectronic Test Structures
Source (book)
International Conference on Microelectronic Test Structures (ICMTS 2006), MAR 06-09, 2006, Austin, TX
Volume/pages
(2006), p. 222-225
ISBN
1-4244-0167-4
ISI
000237219700037
Carrier
E
Target language
English (eng)
Affiliation
University of Antwerp
Abstract
A straightforward model and experimental methodology to extract simultaneously the gate capacitance and the gate leakage is presented for ultra thin oxides. Parasitic effects at high frequencies are minimized using a transmission-line approach while a robust extraction algorithm accounts for eventual instrument inaccuracies.
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