Publication
Title
A comprehensive model to accurately calculate the gate capacitance and the leakage from DC to 100 MHz for ultra thin dielectrics
Author
Abstract
A straightforward model and experimental methodology to extract simultaneously the gate capacitance and the gate leakage is presented for ultra thin oxides. Parasitic effects at high frequencies are minimized using a transmission-line approach while a robust extraction algorithm accounts for eventual instrument inaccuracies.
Language
English
Source (journal)
ICMTS 2006: Proceedings of the 2006 International Conference on Microelectronic Test Structures
Source (book)
International Conference on Microelectronic Test Structures (ICMTS 2006), MAR 06-09, 2006, Austin, TX
Publication
2006
ISBN
1-4244-0167-4
Volume/pages
(2006), p. 222-225
ISI
000237219700037
UAntwerpen
Publication type
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 03.01.2013
Last edited 19.07.2017
To cite this reference