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Title
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A comprehensive model to accurately calculate the gate capacitance and the leakage from DC to 100 MHz for ultra thin dielectrics
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Author
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Abstract
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| A straightforward model and experimental methodology to extract simultaneously the gate capacitance and the gate leakage is presented for ultra thin oxides. Parasitic effects at high frequencies are minimized using a transmission-line approach while a robust extraction algorithm accounts for eventual instrument inaccuracies. |
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Language
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English
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Source (journal)
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ICMTS 2006: Proceedings of the 2006 International Conference on Microelectronic Test Structures
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Source (book)
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International Conference on Microelectronic Test Structures (ICMTS 2006), MAR 06-09, 2006, Austin, TX
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Publication
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2006
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ISBN
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1-4244-0167-4
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Volume/pages
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(2006)
, p. 222-225
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ISI
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000237219700037
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