A new method to calculate leakage current and its applications for sub-45nm MOSFETsA new method to calculate leakage current and its applications for sub-45nm MOSFETs
Faculty of Sciences. Physics
Condensed Matter Theory
S.l. :IEEE, 2005[*]2005
ESSDERC 2005 : proceedings of 35th European Solid-State Device Research Conference, September 12-16, 2005, Grenoble, France
University of Antwerp
This paper proposes a new quantum mechanical model for the calculation of leakage currents. The model incorporates both variational calculus and the transfer matrix method to compute the subband energies and the life times of the inversion layer states. The use of variational calculus simplifies the subband energy calculation due to the analytical firm of the wave functions, which offers an attractive perspective towards the calculation of the electron mobility in the channel. The model can be extended to high-k dielectrics with several layers. Good agreement between experimental data and simulation results is obtained for metal gate capacitors.