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Giant magnetoresistance in a two-dimensional electron gas modulated by magnetic barriers
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| Abstract |
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| The temperature-dependent giant magnetoresistance effect is investigated in a magnetically modulated two-dimensional electron gas, which can be realized by depositing two parallel ferromagnets on the top and bottom of a heterostructure. The effective potential for electrons arising for parallel magnetization allows the electrons to resonantly tunnel through the magnetic barriers, while this is excluded in the anti-parallel situation. Such a discrepancy results in a giant magnetoresistance ratio (MRR), which can be up to 10(31)%. The MRR shows a strong dependence on temperature, but our study indicates that for realistic parameters for a GaAs heterostructure the effect can be as high as 10(4)% at 4 K. |
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English
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| Source (journal) |
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Journal of physics : condensed matter. - London |
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London : 2004
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0953-8984
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16:46(2004), p. 8275-8283
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| ISI |
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000225706000017
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| Full text (Publisher's DOI) |
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| Full text (publisher's version - intranet only) |
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