Publication
Title
Determination of the nitrogen distribution in InGaNAs/GaAs quantum wells by transmission electron microscopy
Author
Abstract
We report on measurements of the nitrogen-concentration profile in an InGaNAs heterostructure by high-resolution transmission electron microscopy. Two samples grown by gas-source molecular-beam epitaxy on GaAs(001) substrates were investigated which contain InGaAs and InGaNAs wells with the same thickness and In concentration. The indium concentration was determined by high-resolution x-ray diffractometry. Indium-concentration profiles were obtained with the composition evaluation by lattice fringe analysis (CELFA) technique from the sample with the InGaAs wells exploiting the chemical sensitivity of the diffracted (002) beam. Nitrogen-concentration profiles were measured in the InGaNAs wells by comparison of the CELFA results observed in the samples with and without nitrogen. (C) 2004 American Institute of Physics.
Language
English
Source (journal)
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
Publication
New York, N.Y. : American Institute of Physics, 2004
ISSN
0003-6951 [print]
1077-3118 [online]
Volume/pages
85:17(2004), p. 3743-3745
ISI
000224798700030
Full text (Publisher's DOI)
UAntwerpen
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 03.01.2013
Last edited 10.08.2017
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