Title
Very high spin polarization in GaAs by injection from a (Ga,Mn)As Zener diode Very high spin polarization in GaAs by injection from a (Ga,Mn)As Zener diode
Author
Publication type
article
Publication
New York, N.Y. :American Institute of Physics ,
Subject
Physics
Source (journal)
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
Volume/pages
84(2004) :18 , p. 3495-3497
ISSN
0003-6951
1077-3118
ISI
000221062500021
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
We demonstrate an electrically injected electron spin polarization in GaAs of 80% at 4.6 K by interband tunneling from the valence band of (Ga,Mn)As into an (Al,Ga)As light-emitting diode. The polarization is analyzed by the oblique Hanle effect and vanishes at 120 K, the Curie temperature of the (Ga,Mn)As injector. The temperature and the bias dependence of the polarization are explained in terms of the properties of the (Ga,Mn)As/GaAs diode. (C) 2004 American Institute of Physics.
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