Publication
Title
Very high spin polarization in GaAs by injection from a (Ga,Mn)As Zener diode
Author
Abstract
We demonstrate an electrically injected electron spin polarization in GaAs of 80% at 4.6 K by interband tunneling from the valence band of (Ga,Mn)As into an (Al,Ga)As light-emitting diode. The polarization is analyzed by the oblique Hanle effect and vanishes at 120 K, the Curie temperature of the (Ga,Mn)As injector. The temperature and the bias dependence of the polarization are explained in terms of the properties of the (Ga,Mn)As/GaAs diode. (C) 2004 American Institute of Physics.
Language
English
Source (journal)
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
Publication
New York, N.Y. : American Institute of Physics, 2004
ISSN
0003-6951 [print]
1077-3118 [online]
Volume/pages
84:18(2004), p. 3495-3497
ISI
000221062500021
Full text (Publisher's DOI)
UAntwerpen
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 03.01.2013
Last edited 28.06.2017
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