Title
A representation of the energy gap in diamond-structure semiconductors
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
London ,
Subject
Physics
Source (journal)
Philosophical magazine letters. - London
Volume/pages
84(2004) :5 , p. 335-340
ISSN
0950-0839
1362-3036
ISI
000222178500006
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
It is shown that the experimental energy gap E-g , in the four semi-conductors C, Si, Ge and alpha-Sn with the diamond lattice structure is well represented by the relation E-g = A(a(c)(1/2) - a(1/2))(5/3), where a is the lattice parameter and a(c) the 'critical' lattice parameter corresponding to E-g = 0. It is suggested that (a(c)(1/2) - a(1/2)) is an order parameter of the transition from zero to non-zero band gap. It is also shown that the dielectric constant can be related to this order parameter. The band gap relation is also found to hold for the III-V semiconductors once the contribution to the band gap from their electronegativity has been subtracted.
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