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A representation of the energy gap in diamond-structure semiconductors
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| Abstract |
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| It is shown that the experimental energy gap E-g , in the four semi-conductors C, Si, Ge and alpha-Sn with the diamond lattice structure is well represented by the relation E-g = A(a(c)(1/2) - a(1/2))(5/3), where a is the lattice parameter and a(c) the 'critical' lattice parameter corresponding to E-g = 0. It is suggested that (a(c)(1/2) - a(1/2)) is an order parameter of the transition from zero to non-zero band gap. It is also shown that the dielectric constant can be related to this order parameter. The band gap relation is also found to hold for the III-V semiconductors once the contribution to the band gap from their electronegativity has been subtracted. |
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| Language |
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English
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| Source (journal) |
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Philosophical magazine letters. - London |
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| Publication |
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London : 2004
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| ISSN |
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0950-0839 [print]
1362-3036 [online]
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| Volume/pages |
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84:5(2004), p. 335-340
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| ISI |
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000222178500006
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