Title |
|
|
|
Ge deep sub-micron pFETs with etched TaN metal gate on a High-K dielectric, fabricated in a 200mm silicon prototyping line
| |
Author |
|
|
|
| |
Abstract |
|
|
| | |
Language |
|
|
|
English
| |
Source (journal) |
|
|
|
ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | |
Source (book) |
|
|
|
34th European Solid-State Device Research Conference (ESSDERC 2004), SEP 21-23, 2004, Leuven, BELGIUM | |
Publication |
|
|
|
New york : Ieee, 2004
| |
ISBN |
|
|
|
0-7803-8478-4
| |
Volume/pages |
|
|
|
(2004), p. 189-192
| |
ISI |
|
|
|
000225486100040
| |
Full text (Publisher's DOI) |
|
|
| | |
|