Title
Physical modeling and prediction of the matching properties of MOSFETsPhysical modeling and prediction of the matching properties of MOSFETs
Author
Publication type
conferenceObject
Publication
Subject
Physics
Source (journal)
ESSDERC 2004: proceedings of the 34th European solid-state device research conference
Source (book)
34th European Solid-State Device Research Conference (ESSDERC 2004), SEP 21-23, 2004, Leuven, BELGIUM
Volume/pages
(2004), p. 193-196
ISBN
0-7803-8478-4
ISI
000225486100041
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
A physical model is presented that describes the matching properties of the MOS transistor. Fluctuations in channel doping, fixed oxide charge, gate doping, and oxide thickness are taken into account. A good agreement is demonstrated between the model and the mismatch in the drain current and transconductance of a 0.13 mum technology. Fluctuations in the channel doping are found to be the dominating effect. These affect the transistor through the threshold voltage directly, and through Coulomb scattering. A prediction is made concerning the matching properties of future technologies. It is expected that the fluctuations in the threshold voltage remain constant at A(0)(DeltaV(T))=3mVmum, independently of the technology generation.
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