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Title
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Physical modeling and prediction of the matching properties of MOSFETs
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Author
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Abstract
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| A physical model is presented that describes the matching properties of the MOS transistor. Fluctuations in channel doping, fixed oxide charge, gate doping, and oxide thickness are taken into account. A good agreement is demonstrated between the model and the mismatch in the drain current and transconductance of a 0.13 mum technology. Fluctuations in the channel doping are found to be the dominating effect. These affect the transistor through the threshold voltage directly, and through Coulomb scattering. A prediction is made concerning the matching properties of future technologies. It is expected that the fluctuations in the threshold voltage remain constant at A(0)(DeltaV(T))=3mVmum, independently of the technology generation. |
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Language
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English
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Source (journal)
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ESSDERC 2004: proceedings of the 34th European solid-state device research conference
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Source (book)
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34th European Solid-State Device Research Conference (ESSDERC 2004), SEP 21-23, 2004, Leuven, BELGIUM
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Publication
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2004
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ISBN
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0-7803-8478-4
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DOI
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10.1109/ESSDER.2004.1356522
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Volume/pages
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(2004)
, p. 193-196
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ISI
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000225486100041
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Full text (Publisher's DOI)
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