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Physical modeling and prediction of the matching properties of MOSFETs
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| Abstract |
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| A physical model is presented that describes the matching properties of the MOS transistor. Fluctuations in channel doping, fixed oxide charge, gate doping, and oxide thickness are taken into account. A good agreement is demonstrated between the model and the mismatch in the drain current and transconductance of a 0.13 mum technology. Fluctuations in the channel doping are found to be the dominating effect. These affect the transistor through the threshold voltage directly, and through Coulomb scattering. A prediction is made concerning the matching properties of future technologies. It is expected that the fluctuations in the threshold voltage remain constant at A(0)(DeltaV(T))=3mVmum, independently of the technology generation. | | |
| Language |
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English
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| Source (journal) |
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ESSDERC 2004: proceedings of the 34th European solid-state device research conference | |
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34th European Solid-State Device Research Conference (ESSDERC 2004), SEP 21-23, 2004, Leuven, BELGIUM | |
| Publication |
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2004
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| ISBN |
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0-7803-8478-4
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| Volume/pages |
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(2004), p. 193-196
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| ISI |
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000225486100041
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| Full text (Publisher's DOI) |
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