|
Title
|
|
|
|
Physical modeling and prediction of the matching properties of MOSFETs
| |
|
Author
|
|
|
|
| |
|
Abstract
|
|
|
|
| A physical model is presented that describes the matching properties of the MOS transistor. Fluctuations in channel doping, fixed oxide charge, gate doping, and oxide thickness are taken into account. A good agreement is demonstrated between the model and the mismatch in the drain current and transconductance of a 0.13 mum technology. Fluctuations in the channel doping are found to be the dominating effect. These affect the transistor through the threshold voltage directly, and through Coulomb scattering. A prediction is made concerning the matching properties of future technologies. It is expected that the fluctuations in the threshold voltage remain constant at A(0)(DeltaV(T))=3mVmum, independently of the technology generation. |
| |
|
Language
|
|
|
|
English
| |
|
Source (journal)
|
|
|
|
ESSDERC 2004: proceedings of the 34th European solid-state device research conference
| |
|
Source (book)
|
|
|
|
34th European Solid-State Device Research Conference (ESSDERC 2004), SEP 21-23, 2004, Leuven, BELGIUM
| |
|
Publication
|
|
|
|
2004
| |
|
ISBN
|
|
|
|
0-7803-8478-4
| |
|
Volume/pages
|
|
|
|
(2004)
, p. 193-196
| |
|
ISI
|
|
|
|
000225486100041
| |
|
Full text (Publisher's DOI)
|
|
|
|
| |
|