Publication
Title
Physical modeling and prediction of the matching properties of MOSFETs
Author
Abstract
A physical model is presented that describes the matching properties of the MOS transistor. Fluctuations in channel doping, fixed oxide charge, gate doping, and oxide thickness are taken into account. A good agreement is demonstrated between the model and the mismatch in the drain current and transconductance of a 0.13 mum technology. Fluctuations in the channel doping are found to be the dominating effect. These affect the transistor through the threshold voltage directly, and through Coulomb scattering. A prediction is made concerning the matching properties of future technologies. It is expected that the fluctuations in the threshold voltage remain constant at A(0)(DeltaV(T))=3mVmum, independently of the technology generation.
Language
English
Source (journal)
ESSDERC 2004: proceedings of the 34th European solid-state device research conference
Source (book)
34th European Solid-State Device Research Conference (ESSDERC 2004), SEP 21-23, 2004, Leuven, BELGIUM
Publication
2004
ISBN
0-7803-8478-4
Volume/pages
(2004), p. 193-196
ISI
000225486100041
Full text (Publishers DOI)
UAntwerpen
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 03.01.2013
Last edited 25.04.2017
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