Publication
Title
Modelling of the RF self-actuation of electrostatic RF-MEMS devices
Author
Abstract
This paper presents a study of the self-biasing of RF-MEMS shunt switching devices, and tunable capacitors per extension, taking into account the negative feedback on the electrostatic force introduced by the mismatch. The influence of the RF-power on the DC-actuation is included in the normalised analytical formulas developed for any shunt mismatch (capacitive or not) involving a moving armature. We demonstrate the possibility to overcome the pull-in instability by using the power-actuation and the importance of the mismatch to accurately predict the actuation characteristics. Our model can account for parabolic and close-to-linear dependence between DC-bias and RF-power at pull-in.
Language
English
Source (journal)
Proceedings IEEE Micro Electro Mechanical Systems / Institute of Electrical and Electronics Engineers. Robotics and Automation Society. Micro Electro Mechanical Systems [New York] - New York, N.Y.
Mechanical systems, technical digest
Source (book)
17th IEEE International Conference on Micro Electro Mechanical Systems, JAN 25-29, 2004, Maastricht, NETHERLANDS
Publication
New York, N.Y. : 2004
ISBN
0-7803-8265-X
Volume/pages
(2004), p. 245-248
ISI
000189435200061
Full text (Publisher's DOI)
UAntwerpen
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 03.01.2013
Last edited 14.10.2017
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