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Title
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Modelling of the RF self-actuation of electrostatic RF-MEMS devices
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Author
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Abstract
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| This paper presents a study of the self-biasing of RF-MEMS shunt switching devices, and tunable capacitors per extension, taking into account the negative feedback on the electrostatic force introduced by the mismatch. The influence of the RF-power on the DC-actuation is included in the normalised analytical formulas developed for any shunt mismatch (capacitive or not) involving a moving armature. We demonstrate the possibility to overcome the pull-in instability by using the power-actuation and the importance of the mismatch to accurately predict the actuation characteristics. Our model can account for parabolic and close-to-linear dependence between DC-bias and RF-power at pull-in. |
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Language
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English
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Source (journal)
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Proceedings IEEE Micro Electro Mechanical Systems / Institute of Electrical and Electronics Engineers. Robotics and Automation Society. Micro Electro Mechanical Systems [New York] - New York, N.Y.
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Mechanical systems, technical digest
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Source (book)
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17th IEEE International Conference on Micro Electro Mechanical Systems, JAN 25-29, 2004, Maastricht, NETHERLANDS
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Publication
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New York, N.Y.
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2004
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ISBN
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0-7803-8265-X
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DOI
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10.1109/MEMS.2004.1290568
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Volume/pages
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(2004)
, p. 245-248
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ISI
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000189435200061
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Full text (Publisher's DOI)
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