Publication
Title
High resolution two-dimensional carrier profiling on sub-100nm silicon nano-devices using scanning spreading resistance microscopy
Author
Abstract
This work presents the recent progress in SSRM capabilities highlighting enhanced spatial resolution (< 5 nm) and excellent concentration sensitivity (< 20%). The latter is demonstrated through the analysis of three carrier profiling applications i.e. the calibration of process simulations for a 90nm n-MOS technology, the determination of the impact of nitridation on the lateral diffusion in a 40nm n-MOS technology and the study of activation problems in SPER-anneals of shallow implants.
Language
English
Source (journal)
ESSDERC 2004: proceedings of the 34th European solid-state device research conference
Source (book)
34th European Solid-State Device Research Conference (ESSDERC 2004), SEP 21-23, 2004, Leuven, BELGIUM
Publication
2004
ISBN
0-7803-8478-4
Volume/pages
(2004), p. 101-104
ISI
000225486100018
Full text (Publisher's DOI)
UAntwerpen
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 03.01.2013
Last edited 31.07.2017
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