Title
High resolution two-dimensional carrier profiling on sub-100nm silicon nano-devices using scanning spreading resistance microscopy High resolution two-dimensional carrier profiling on sub-100nm silicon nano-devices using scanning spreading resistance microscopy
Author
Publication type
conferenceObject
Publication
Subject
Physics
Source (journal)
ESSDERC 2004: proceedings of the 34th European solid-state device research conference
Source (book)
34th European Solid-State Device Research Conference (ESSDERC 2004), SEP 21-23, 2004, Leuven, BELGIUM
Volume/pages
(2004) , p. 101-104
ISBN
0-7803-8478-4
ISI
000225486100018
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
This work presents the recent progress in SSRM capabilities highlighting enhanced spatial resolution (< 5 nm) and excellent concentration sensitivity (< 20%). The latter is demonstrated through the analysis of three carrier profiling applications i.e. the calibration of process simulations for a 90nm n-MOS technology, the determination of the impact of nitridation on the lateral diffusion in a 40nm n-MOS technology and the study of activation problems in SPER-anneals of shallow implants.
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