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Title
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High resolution two-dimensional carrier profiling on sub-100nm silicon nano-devices using scanning spreading resistance microscopy
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Author
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Abstract
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| This work presents the recent progress in SSRM capabilities highlighting enhanced spatial resolution (< 5 nm) and excellent concentration sensitivity (< 20%). The latter is demonstrated through the analysis of three carrier profiling applications i.e. the calibration of process simulations for a 90nm n-MOS technology, the determination of the impact of nitridation on the lateral diffusion in a 40nm n-MOS technology and the study of activation problems in SPER-anneals of shallow implants. |
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Language
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English
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Source (journal)
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ESSDERC 2004: proceedings of the 34th European solid-state device research conference
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Source (book)
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34th European Solid-State Device Research Conference (ESSDERC 2004), SEP 21-23, 2004, Leuven, BELGIUM
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Publication
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2004
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ISBN
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0-7803-8478-4
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DOI
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10.1109/ESSDER.2004.1356498
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Volume/pages
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(2004)
, p. 101-104
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ISI
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000225486100018
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Full text (Publisher's DOI)
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