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Title
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Interface passivation mechanisms in metal gated oxide capacitors
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Author
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Abstract
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| We use the conductance technique to measure the Density of Interface states, Dit, in MOS capacitors with metal gate electrodes. Dit as function of the band gap is extracted for a series of capacitors. ALD TiN electrodes show poor passivation while PVD TaN electrodes not. There is no evidence that the poor passivation in the TiN electrodes is because of low Hydrogen diffusion through the metal oxide stack. Possibly the strain induced by the AID metal laver or contamination from the metal precursors are responsible for the poor passivation. |
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Language
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English
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Source (journal)
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ESSDERC 2004: proceedings of the 34th European solid-state device research conference
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Source (book)
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34th European Solid-State Device Research Conference (ESSDERC 2004), SEP 21-23, 2004, Leuven, BELGIUM
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Publication
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2004
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ISBN
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0-7803-8478-4
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DOI
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10.1109/ESSDER.2004.1356555
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Volume/pages
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(2004)
, p. 325-328
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ISI
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000225486100074
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Full text (Publisher's DOI)
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