Publication
Title
Interface passivation mechanisms in metal gated oxide capacitors
Author
Abstract
We use the conductance technique to measure the Density of Interface states, Dit, in MOS capacitors with metal gate electrodes. Dit as function of the band gap is extracted for a series of capacitors. ALD TiN electrodes show poor passivation while PVD TaN electrodes not. There is no evidence that the poor passivation in the TiN electrodes is because of low Hydrogen diffusion through the metal oxide stack. Possibly the strain induced by the AID metal laver or contamination from the metal precursors are responsible for the poor passivation.
Language
English
Source (journal)
ESSDERC 2004: proceedings of the 34th European solid-state device research conference
Source (book)
34th European Solid-State Device Research Conference (ESSDERC 2004), SEP 21-23, 2004, Leuven, BELGIUM
Publication
2004
ISBN
0-7803-8478-4
Volume/pages
(2004), p. 325-328
ISI
000225486100074
Full text (Publisher's DOI)
UAntwerpen
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 03.01.2013
Last edited 19.07.2017
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