| Title |
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A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon
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| Abstract |
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| Language |
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English
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| Source (journal) |
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Physica: B: condensed matter. - Amsterdam | |
| Source (book) |
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22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK | |
| Publication |
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Amsterdam : 2003
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| ISSN |
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0921-4526
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| Volume/pages |
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340(2003), p. 1013-1017
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| ISI |
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000188300200213
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