|
Title
|
|
|
|
A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon
|
|
|
Author
|
|
|
|
|
|
|
Abstract
|
|
|
|
| Infrared absorption spectra of composite precipitates are analysed with a modified Day-Thorpe algorithm, assuming a precipitated phase consisting of a mixture of two components with known optical properties. Additional constraints are introduced when solving the model equations by using a priori knowledge making the algorithm more reliable. It is shown that this novel approach allows determining both morphology and composition of precipitates. The method is applied to characterise oxide precipitates in boron-doped silicon. The results indicate that for the resistivity range above 60 mOmegacm, the precipitated phase is most probably SiO1.17+/-0.14, while for resistivities below 20 mOmega cm, precipitates consist of a SiO2/B2O3 composite with a large volume fraction of B(2)0(3) (up to 40% for 8 mOmegacm material). (C) 2003 Elsevier B.V. All rights reserved. |
|
|
|
Language
|
|
|
|
English
|
|
|
Source (journal)
|
|
|
|
Physica: B: condensed matter. - Amsterdam
|
|
|
Source (book)
|
|
|
|
22nd International Conference on Defects in Semiconductors (ICDS-22), JUL 28-AUG 01, 2003, UNIV AARHUS, AARHUS, DENMARK
|
|
|
Publication
|
|
|
|
Amsterdam
:
2003
|
|
|
ISSN
|
|
|
|
0921-4526
|
|
|
Volume/pages
|
|
|
|
340
(2003)
, p. 1013-1017
|
|
|
ISI
|
|
|
|
000188300200213
|
|
|
Full text (Publisher's DOI)
|
|
|
|
|
|
|
Full text (publisher's version - intranet only)
|
|
|
|
|
|