Publication
Title
On the ferromagnetic exchange in Mn-doped III-V semiconductors
Author
Abstract
We propose a microscopic model for double exchange in GaAs:Mn, GaP:Mn which is based on the interaction between the transition metal impurities and the heavy holes of host semiconductor. The kinematic exchange is derived and the Curie temperature is calculated which agrees with recent experiments. (C) 2003 Elsevier Science B.V. All rights reserved.
Language
English
Source (journal)
Physica: B : condensed matter. - Amsterdam, 1998, currens
Source (book)
23rd International Conference on Low Temperature Physics (LT23), AUG 20-27, 2002, HIROSHIMA, JAPAN
Publication
Amsterdam : North-Holland , 2003
ISSN
0921-4526 [print]
1873-2135 [online]
DOI
10.1016/S0921-4526(02)02240-8
Volume/pages
329 :Part 2 (2003) , p. 1282-1283
ISI
000183802700400
Full text (Publisher's DOI)
Full text (publisher's version - intranet only)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identifier
Creation 03.01.2013
Last edited 03.09.2024
To cite this reference