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Title
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On the ferromagnetic exchange in Mn-doped III-V semiconductors
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Author
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Abstract
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| We propose a microscopic model for double exchange in GaAs:Mn, GaP:Mn which is based on the interaction between the transition metal impurities and the heavy holes of host semiconductor. The kinematic exchange is derived and the Curie temperature is calculated which agrees with recent experiments. (C) 2003 Elsevier Science B.V. All rights reserved. |
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Language
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English
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Source (journal)
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Physica: B : condensed matter. - Amsterdam, 1998, currens
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Source (book)
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23rd International Conference on Low Temperature Physics (LT23), AUG 20-27, 2002, HIROSHIMA, JAPAN
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Publication
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Amsterdam
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North-Holland
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2003
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ISSN
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0921-4526
[print]
1873-2135
[online]
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DOI
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10.1016/S0921-4526(02)02240-8
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Volume/pages
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329
:Part 2
(2003)
, p. 1282-1283
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ISI
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000183802700400
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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