Title
Physcial characterization of ultrathin high k dielectrics Physcial characterization of ultrathin high k dielectrics
Author
Publication type
conferenceObject
Publication
Wuhan ,
Subject
Physics
Source (journal)
Materials Research Society symposium proceedings. - Wuhan
Source (book)
Symposium on Novel Materials and Processes for Advanced CMOS held at the, 2002 MRS Fall Meeting, DEC 02-04, 2002, BOSTON, MA
Volume/pages
745(2003) , p. 23-33
ISBN
1-55899-682-6
ISI
000182316500004
Carrier
E
Target language
English (eng)
Affiliation
University of Antwerp
Abstract
Targeting very thin equivalent oxides (<1 nm) requires the deposition of (very) thin dielectrica onto silicon surfaces with minimal interfacial oxide. Typically, high-k dielectric layers are deposited using ALD or MOCVD with, at present, a prime emphasis on Hf-based high-k dielectrics, either as pure HfO2, as silicate or mixed with Al2O3. In some cases nitrogen is added to improve the high-temperature stability. Depending on the deposition conditions ALD as well as MOCVD show serious deficiencies in terms of film closure and material density for ultra thin (<3 nm) films. Various surface preparation methods and deposition conditions are used to improve the film quality. Detailed studies on the film growth and its evolution requires the use of many analytical methods such as Rutherford Backscattering Spectrometry, Low Energy Ion Scattering, Time-of-flight SIMS, (spectroscopic) ellipsometry and X-ray photoelectron spectroscopy. When trying to correlate the results in terms of film thickness, apparent discrepancies can be observed which relate to non-homogeneous growth and reduced material density.
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