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EM-induced mass transport at the Cu/barrier interface : a new test structure for rapid assessment at user conditions
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| Abstract |
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| Starting from the concept of single-damascene Blech structures, a slit-test structure was devised for the assessment of mass transport at the Cu/barrier interface. Much more compatible with standard processing, the proposed slit-test structure easily matches the sensitivity to mass transport of traditional Blech structures. Finite Element Analysis indicates the electron flow in this structure to be concentrated at the Cu/barrier interface, making it electrically very sensitive to mass transport along this diffusion path. Electrical and physical failure analysis suggest a sensitivity high enough to enable wafer-level testing of interface diffusion at user conditions. | | |
| Language |
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English
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| Source (journal) |
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Proceedings of the Ieee 2003 international interconnect technology conference | |
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6th Annual International Interconnect Technology Conference, JUN 02-04, 2003, BURLINGAME, CA | |
| Publication |
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2003
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| ISBN |
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0-7803-7797-4
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(2003), p. 21-23
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| ISI |
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000184465800006
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| Full text (Publisher's DOI) |
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