EM-induced mass transport at the Cu/barrier interface : a new test structure for rapid assessment at user conditionsEM-induced mass transport at the Cu/barrier interface : a new test structure for rapid assessment at user conditions
Proceedings of the Ieee 2003 international interconnect technology conference
6th Annual International Interconnect Technology Conference, JUN 02-04, 2003, BURLINGAME, CA
(2003), p. 21-23
University of Antwerp
Starting from the concept of single-damascene Blech structures, a slit-test structure was devised for the assessment of mass transport at the Cu/barrier interface. Much more compatible with standard processing, the proposed slit-test structure easily matches the sensitivity to mass transport of traditional Blech structures. Finite Element Analysis indicates the electron flow in this structure to be concentrated at the Cu/barrier interface, making it electrically very sensitive to mass transport along this diffusion path. Electrical and physical failure analysis suggest a sensitivity high enough to enable wafer-level testing of interface diffusion at user conditions.