Publication
Title
Dynamic substrate resistance snapback triggering of ESD protection devices
Author
Abstract
This paper describes a novel approach to design self-triggered ESD protection structures. It consists in adding a reverse biased p-n junction in the path of the current, flowing into the base of the ESD activated parasitic BJT device. As a result, the base resistance of the parasitic BJT is increased, which in turn leads to faster and more uniform snapback triggering. The ESD threshold levels for the investigated structures designed in the new approach are found to increase. MEDICI simulations, in combination with TLP and EMMI characterization are performed to study the structure operation.
Language
English
Source (journal)
41st annual proceedings: international reliability physics symposium
Source (book)
41st Annual IEEE International Reliability Physics Symposium, MAR 30-APR 04, 2003, DALLAS, TX
Publication
2003
ISBN
0-7803-7649-8
Volume/pages
(2003), p. 256-260
ISI
000182322300043
Full text (Publisher's DOI)
UAntwerpen
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 03.01.2013
Last edited 07.12.2017
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