Publication
Title
Line edge roughness : characterization, modeling and impact on device behavior
Author
Abstract
Simple analytical expressions are presented, which calculate the impact of line edge roughness on MOSFET parameter fluctuations. It is experimentally demonstrated that LER has no impact on 80 nm gate length transistors. Simulations show LER to become significant for 32 nm channel length devices.
Language
English
Source (journal)
International electron devices 2002 meeting, technical digest
Source (book)
IEEE International Electron Devices Meeting, DEC 08-11, 2002, SAN FRANCISCO, CA
Publication
2002
ISBN
0-7803-7462-2
Volume/pages
(2002), p. 307-310
ISI
000185143400070
UAntwerpen
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 03.01.2013
Last edited 09.09.2017
To cite this reference