Title
Influence of silicon nitride passivation on DC and RF behaviour of InPHEMTs Influence of silicon nitride passivation on DC and RF behaviour of InPHEMTs
Author
Publication type
conferenceObject
Publication
Subject
Physics
Source (journal)
EDMO 2002: 10TH IEEE International symposium on electron devices for microwave and optoelectronic applications
Source (book)
10th IEEE International Symposium on Electron Devices for Microwave and, Optoelectronic Applications, NOV 18-19, 2002, UNIV MANCHESTER INST SCI & TECHNOL, MANCHESTER, ENGLAND
Volume/pages
(2002) , p. 172-176
ISBN
0-7803-7530-0
ISI
000180832000031
Carrier
E
Target language
English (eng)
Affiliation
University of Antwerp
Abstract
In this paper, the influence of silicon nitride (Si3N4) passivation on the DC and RF behaviour of a delta-doped InP based HEMT is examined. For operation stability and better reliability of MMICs using HEMTs, devices must be coated with a passivating, dielectric layer. Si3N4 is an excellent candidate for use as a passivation layer since it can also be used as MIM capacitor dielectric for InP MMIC fabrication. After passivation, a shift in the threshold voltage of the transistor is noticed, together with an increase in transconductance. However, the passivation layer increases the parasitic capacitances and thus the RF performance of the device drops.
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