Publication
Title
In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates
Author
Abstract
The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide.
Language
English
Source (journal)
Journal of materials research. - New York, N.Y.
Publication
New York, N.Y. : 2001
ISSN
0884-2914
Volume/pages
16:3(2001), p. 701-708
ISI
000167407200011
Full text (Publishers DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 03.01.2013
Last edited 25.05.2017
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