Title
In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
New York, N.Y. ,
Subject
Physics
Source (journal)
Journal of materials research. - New York, N.Y.
Volume/pages
16(2001) :3 , p. 701-708
ISSN
0884-2914
ISI
000167407200011
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
The results of an in situ transmission electron microscopy study of the formation of Co-silicides on patterned (001) Si substrates are discussed. It is shown that the results of the in situ heating experiments agreed very well with the data based on standard rapid thermal annealing experiments. Fast heating rates resulted in better definition of the silicide lines. Also, better lines were obtained for samples that received already a low-temperature ex situ anneal. A Ti cap layer gave rise to a higher degree of epitaxy in the CoSi2 silicide.
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