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Title
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Improved phosphoric acid mixtures for nitride strip
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Author
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Abstract
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| Wet chemical etching using hot phosphoric acid at high temperature is commonly used for the removal of nitride films during silicon wafer processing. The nitride-to-oxide etch selectivity using H3PO4 at 160 degreesC typically amounts to 50:1. As rather high over-etch times are employed to ensure complete removal of the nitride films and because thinner and/or faster etchable oxide films are used for future generations of technologies, a more reproducible and higher etch selectivity is demanded. In this paper it will be demonstrated that the nitride-to-oxide etch selectivity can be significantly improved by using a Si-based additive in the bath. |
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Language
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English
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Source (journal)
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Diffusion and defect data : solid state data : part B : solid state phenomena. - Vaduz, 1988, currens
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Source (book)
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5th International Symposium on Ultra Clean Processing of Silicon, Surfaces (UCPSS 2000), SEP 18-20, 2000, OOSTENDE, BELGIUM
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Publication
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Vaduz
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2001
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ISBN
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3-908450-57-8
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DOI
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10.4028/WWW.SCIENTIFIC.NET/SSP.76-77.43
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Volume/pages
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76-77
(2001)
, p. 43-46
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ISI
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000168449500011
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Full text (Publisher's DOI)
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