Publication
Title
Improved phosphoric acid mixtures for nitride strip
Author
Abstract
Wet chemical etching using hot phosphoric acid at high temperature is commonly used for the removal of nitride films during silicon wafer processing. The nitride-to-oxide etch selectivity using H3PO4 at 160 degreesC typically amounts to 50:1. As rather high over-etch times are employed to ensure complete removal of the nitride films and because thinner and/or faster etchable oxide films are used for future generations of technologies, a more reproducible and higher etch selectivity is demanded. In this paper it will be demonstrated that the nitride-to-oxide etch selectivity can be significantly improved by using a Si-based additive in the bath.
Language
English
Source (journal)
Diffusion and defect data : solid state data : part B : solid state phenomena. - Vaduz, 1988, currens
Source (book)
5th International Symposium on Ultra Clean Processing of Silicon, Surfaces (UCPSS 2000), SEP 18-20, 2000, OOSTENDE, BELGIUM
Publication
Vaduz : 2001
ISBN
3-908450-57-8
Volume/pages
76-77(2001), p. 43-46
ISI
000168449500011
UAntwerpen
Publication type
Subject
External links
Web of Science
Record
Identification
Creation 03.01.2013
Last edited 06.08.2017