Title
Improved phosphoric acid mixtures for nitride strip Improved phosphoric acid mixtures for nitride strip
Author
Publication type
article
Publication
Vaduz ,
Subject
Physics
Source (journal)
Diffusion and defect data : solid state data : part B : solid state phenomena. - Vaduz, 1988, currens
Source (book)
5th International Symposium on Ultra Clean Processing of Silicon, Surfaces (UCPSS 2000), SEP 18-20, 2000, OOSTENDE, BELGIUM
Volume/pages
76-77(2001) , p. 43-46
ISBN
3-908450-57-8
ISI
000168449500011
Carrier
E
Target language
English (eng)
Abstract
Wet chemical etching using hot phosphoric acid at high temperature is commonly used for the removal of nitride films during silicon wafer processing. The nitride-to-oxide etch selectivity using H3PO4 at 160 degreesC typically amounts to 50:1. As rather high over-etch times are employed to ensure complete removal of the nitride films and because thinner and/or faster etchable oxide films are used for future generations of technologies, a more reproducible and higher etch selectivity is demanded. In this paper it will be demonstrated that the nitride-to-oxide etch selectivity can be significantly improved by using a Si-based additive in the bath.
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