Publication
Title
Low-temperature photodarkening of the system prepared by PECVD
Author
Abstract
Films of the amorphous AsxSe100-x system were prepared by plasma-enhanced chemical vapor deposition (PECVD) using different gas ratios of the hydrides, AsH3 and H2Se. In the Se-rich region the optical bandgap decreased with increasing As content, in agreement with measurements made on films prepared by evaporation. The temperature dependence of the optical gap (77-300 K) could be described by Fan's one-phonon approximation, indicating that electron-phonon interaction (thermal disorder) plays the most important role. Measurements of photodarkening at 77 K showed that the decrease of the optical gap and the slope of the Tauc plot are intercorrelated. The kinetics of the photoinduced shift could be best described by a stretched-exponential law. (C) 2000 Elsevier Science B.V. All rights reserved.
Language
English
Source (journal)
Materials letters. - Amsterdam
Publication
Amsterdam : 2000
ISSN
0167-577X
Volume/pages
46:4(2000), p. 234-238
ISI
000165209400012
Full text (Publishers DOI)
Full text (publishers version - intranet only)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 03.01.2013
Last edited 26.04.2017
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