Title
Low-temperature photodarkening of the <tex>$As_{x}Se_{100-x}$</tex> system prepared by PECVD Low-temperature photodarkening of the <tex>$As_{x}Se_{100-x}$</tex> system prepared by PECVD
Author
Faculty/Department
Faculty of Applied Economics
Faculty of Sciences. Biology
Faculty of Sciences. Chemistry
Publication type
article
Publication
Amsterdam ,
Subject
Physics
Source (journal)
Materials letters. - Amsterdam
Volume/pages
46(2000) :4 , p. 234-238
ISSN
0167-577X
ISI
000165209400012
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
Films of the amorphous AsxSe100-x system were prepared by plasma-enhanced chemical vapor deposition (PECVD) using different gas ratios of the hydrides, AsH3 and H2Se. In the Se-rich region the optical bandgap decreased with increasing As content, in agreement with measurements made on films prepared by evaporation. The temperature dependence of the optical gap (77-300 K) could be described by Fan's one-phonon approximation, indicating that electron-phonon interaction (thermal disorder) plays the most important role. Measurements of photodarkening at 77 K showed that the decrease of the optical gap and the slope of the Tauc plot are intercorrelated. The kinetics of the photoinduced shift could be best described by a stretched-exponential law. (C) 2000 Elsevier Science B.V. All rights reserved.
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