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Title
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Low-temperature photodarkening of the system prepared by PECVD
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Author
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Abstract
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| Films of the amorphous AsxSe100-x system were prepared by plasma-enhanced chemical vapor deposition (PECVD) using different gas ratios of the hydrides, AsH3 and H2Se. In the Se-rich region the optical bandgap decreased with increasing As content, in agreement with measurements made on films prepared by evaporation. The temperature dependence of the optical gap (77-300 K) could be described by Fan's one-phonon approximation, indicating that electron-phonon interaction (thermal disorder) plays the most important role. Measurements of photodarkening at 77 K showed that the decrease of the optical gap and the slope of the Tauc plot are intercorrelated. The kinetics of the photoinduced shift could be best described by a stretched-exponential law. (C) 2000 Elsevier Science B.V. All rights reserved. |
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Language
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English
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Source (journal)
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Materials letters. - Amsterdam
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Publication
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Amsterdam
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2000
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ISSN
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0167-577X
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DOI
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10.1016/S0167-577X(00)00177-4
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Volume/pages
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46
:4
(2000)
, p. 234-238
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ISI
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000165209400012
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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