| Title |
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High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1-xGex/Si(100) heterostructurs
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| Author |
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| Abstract |
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| Language |
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English
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| Source (journal) |
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Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens | |
| Publication |
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New York, N.Y. : American Institute of Physics, 1999
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| ISSN |
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0021-8979 [print]
1089-7550 [online]
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| Volume/pages |
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85:4(1999), p. 2119-2123
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| ISI |
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000078403000017
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| Full text (Publisher's DOI) |
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