Title
Plasma-enhanced chemical-vapor-deposition of amorphous <tex>$Ge_{x}Se_{1-x}$</tex> films
Author
Faculty/Department
Faculty of Applied Economics
Publication type
article
Publication
Amsterdam ,
Subject
Physics
Source (journal)
Journal of non-crystalline solids. - Amsterdam
Source (book)
15th International Conference on Amorphous Semiconductors - Science and, Technology, SEP 06-10, 1993, CAMBRIDGE, ENGLAND
Volume/pages
166(1993) :Part 2 , p. 1195-1198
ISSN
0022-3093
ISI
A1993MT78200133
Carrier
E
Target language
English (eng)
Affiliation
University of Antwerp
Abstract
We describe plasma-enhanced chemical vapour deposition for decomposing a mixture of two gaseous hydrides, GeH4 and H2Se, to yield layers of amorphous GexSe1-x. We discuss the influence of the gas ratios and the deposition conditions (pressure, rf power input) on the chemical composition and homogeneity of the films. The composition of the Ge-Se samples varied between Ge-rich (typically Ge0.66Se0.34) and Se-rich deposits (maximum Ge0.23Se0.77) Information concerning the structure of as-deposited Ge-Se layers was obtained from infrared and Raman spectroscopy. Ge-rich films were unstable in air and showed in their IR spectra broad absorption bands of Ge-O vibrations, increasing in intensity when keeping them in air for a long time.
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