Publication
Title
Plasma-enhanced chemical-vapor-deposition of amorphous films
Author
Abstract
We describe plasma-enhanced chemical vapour deposition for decomposing a mixture of two gaseous hydrides, GeH4 and H2Se, to yield layers of amorphous GexSe1-x. We discuss the influence of the gas ratios and the deposition conditions (pressure, rf power input) on the chemical composition and homogeneity of the films. The composition of the Ge-Se samples varied between Ge-rich (typically Ge0.66Se0.34) and Se-rich deposits (maximum Ge0.23Se0.77) Information concerning the structure of as-deposited Ge-Se layers was obtained from infrared and Raman spectroscopy. Ge-rich films were unstable in air and showed in their IR spectra broad absorption bands of Ge-O vibrations, increasing in intensity when keeping them in air for a long time.
Language
English
Source (journal)
Journal of non-crystalline solids. - Amsterdam
Source (book)
15th International Conference on Amorphous Semiconductors - Science and, Technology, SEP 06-10, 1993, CAMBRIDGE, ENGLAND
Publication
Amsterdam : 1993
ISSN
0022-3093
Volume/pages
166:Part 2(1993), p. 1195-1198
ISI
A1993MT78200133
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 03.01.2013
Last edited 26.04.2017
To cite this reference