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Title
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Plasma-enhanced chemical-vapor-deposition of amorphous films
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Author
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Abstract
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| We describe plasma-enhanced chemical vapour deposition for decomposing a mixture of two gaseous hydrides, GeH4 and H2Se, to yield layers of amorphous GexSe1-x. We discuss the influence of the gas ratios and the deposition conditions (pressure, rf power input) on the chemical composition and homogeneity of the films. The composition of the Ge-Se samples varied between Ge-rich (typically Ge0.66Se0.34) and Se-rich deposits (maximum Ge0.23Se0.77) Information concerning the structure of as-deposited Ge-Se layers was obtained from infrared and Raman spectroscopy. Ge-rich films were unstable in air and showed in their IR spectra broad absorption bands of Ge-O vibrations, increasing in intensity when keeping them in air for a long time. |
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Language
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English
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Source (journal)
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Journal of non-crystalline solids. - Amsterdam
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Source (book)
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15th International Conference on Amorphous Semiconductors - Science and, Technology, SEP 06-10, 1993, CAMBRIDGE, ENGLAND
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Publication
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Amsterdam
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1993
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ISSN
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0022-3093
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Volume/pages
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166
:Part 2
(1993)
, p. 1195-1198
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ISI
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A1993MT78200133
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