| Title |
|
|
|
Plasma-enhanced chemical-vapor-deposition of amorphous films
| |
| Author |
|
|
|
| |
| Abstract |
|
|
|
| We describe plasma-enhanced chemical vapour deposition for decomposing a mixture of two gaseous hydrides, GeH4 and H2Se, to yield layers of amorphous GexSe1-x. We discuss the influence of the gas ratios and the deposition conditions (pressure, rf power input) on the chemical composition and homogeneity of the films. The composition of the Ge-Se samples varied between Ge-rich (typically Ge0.66Se0.34) and Se-rich deposits (maximum Ge0.23Se0.77) Information concerning the structure of as-deposited Ge-Se layers was obtained from infrared and Raman spectroscopy. Ge-rich films were unstable in air and showed in their IR spectra broad absorption bands of Ge-O vibrations, increasing in intensity when keeping them in air for a long time. | | |
| Language |
|
|
|
English
| |
| Source (journal) |
|
|
|
Journal of non-crystalline solids. - Amsterdam | |
| Source (book) |
|
|
|
15th International Conference on Amorphous Semiconductors - Science and, Technology, SEP 06-10, 1993, CAMBRIDGE, ENGLAND | |
| Publication |
|
|
|
Amsterdam : 1993
| |
| ISSN |
|
|
|
0022-3093
| |
| Volume/pages |
|
|
|
166:Part 2(1993), p. 1195-1198
| |
| ISI |
|
|
|
A1993MT78200133
| |
|