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Title
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Defects in high-dose oxygen implanted silicon : a TEM study
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Author
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Abstract
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| Results are discussed of a transmission electron microscopy study of high-dose oxygen implanted silicon. In addition to the general high temperature (> 1200-degrees-C) annealing treatments also annealings at 'low' temperatures (1000-1100-degrees-C) were performed in order to slow down the precipitate and defect reactions. The observed dissolution of the oxide precipitates during prolonged high temperature annealing is explained by critical radius considerations. Threading dislocations are the remaining lattice defects in the silicon overlayer and cannot be removed by further annealing. Low temperature annealing results in the formation and subsequent unfaulting of extrinsic stacking fault loops below the buried oxide layer. |
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Language
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English
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Source (journal)
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Vacuum: the international journal and abstracting service for vacuum science and technology. - Oxford
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Source (book)
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1ST SIOMX WORKSHOP ( SEPARATION BY IMPLANTATION OF OXYGEN ) ( SWI-88 ), NOV 07-08, 1988, UNIV SURREY, GUILDFORD, ENGLAND
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Publication
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Oxford
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1991
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ISSN
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0042-207X
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DOI
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10.1016/0042-207X(91)90055-N
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Volume/pages
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42
:5-6
(1991)
, p. 367-369
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ISI
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A1991EV61700007
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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