Publication
Title
Structural and chemical investigation of InAs/GaAs nanostructures by transmission electron microscopy
Author
Abstract
report on the transmission electron microscopy characterization of InAs Stranski-Krastanov layers grown on GaAs (001) by molecular beam epitaxy at growth temperatures of 480 and 530 degreesC. Chemically sensitive reflections are used for the evaluation of the composition. The different influence of strain effects on the imaging with either the (002) or the (020) reflection is discussed. The considerations show that the (002) reflection can be used for an accurate measurement of the In concentration. The evaluation of concentration profiles of the wetting layers reveal a segregation probability of R = 0.77 +/- 0.02 for T-G = 480 degreesC and R = 0.82 +/- 0.02 for T-G = 530 degreesC.
Language
English
Source (journal)
Physica status solidi: B: basic research. - Berlin
Source (book)
International Conference on Semiconductor Quantum Dots (QD2000), JUL 31-AUG 03, 2000, TECHN UNIV MUNICH, MUNICH, GERMANY
Publication
Berlin : 2001
ISSN
0370-1972
Volume/pages
224:1(2001), p. 213-216
ISI
000167827200043
Full text (Publisher's DOI)
Full text (publisher's version - intranet only)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 03.01.2013
Last edited 16.06.2017
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