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Structural investigation of the epitaxial yittria-stabilized zirconia films deposited on (001) silicon by laser ablation
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| Abstract |
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| Yittria-stabilized zirconia (YSZ) films doped with 3 and 9 vol%. Y(2)O(3), respectively, are epitaxially deposited on (0 0 1) silicon substrates by means of pulsed laser deposition (PLD) technique. Transmission electron microscopy (TEM) and X-ray diffraction are mainly combined to study the film microstructure. It is: found that the film structure strongly depends on the amount of Y(2)O(3) dopant. 99/0 Y(2)O(3)-doped films display a near cubic structure; 45 degrees 1/2(1 1 0) dislocations are the main defects in the film and thermal cracks are formed during cooling. The 3% Y(2)O(3)-doped films are dominated by {1 1 0} twin-related tetragonal domains in which monoclinic phase is found. The films are free of thermal cracks even for films thicker than 2 mum. (C) 2001 Elsevier Science B.V. All rights reserved. | |
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English
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| Source (journal) |
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Journal of crystal growth. - Amsterdam |
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Amsterdam : 2001
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0022-0248
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222:3(2001), p. 558-564
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| ISI |
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000166701500020
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| Full text (publisher's version - intranet only) |
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