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Interaction of a Ti-capped Co thin film with
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| Abstract |
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| The reaction of a Ti (8 nm) capped Co film (15 nm) with a Si3N4 layer (150 nm) is studied after rapid thermal annealing at 660 degreesC for 120 s in a N-2 ambient. X-ray photoelectron spectroscopy, transmission electron microscopy, electron energy-loss spectroscopy, and Auger electron spectroscopy are used to study the reaction products. Combining the results of the different analyses yields a layer stack consisting of: TiO2/TiO/unreacted Co/(Ti,Co)(2)N/Co2Si, followed by amorphous Si3N4. The reaction mechanisms are discussed. Conclusions concerning the risk for degradation of nitride spacers in advanced devices are drawn. (C) 2000 American Institute of Physics. [S0003-6951(00)05248-7]. | |
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English
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Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens |
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New York, N.Y. : American Institute of Physics, 2000
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0003-6951 [print]
1077-3118 [online]
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77:26(2000), p. 4307-4309
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000166120500021
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