Title |
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Epitaxial growth of -SiC on ion-beam synthesized -SiC : structural characterization
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Author |
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Abstract |
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Language |
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English
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Source (journal) |
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Materials science forum. - Lausanne, 1984, currens | |
Source (book) |
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International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA | |
Publication |
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Zurich-uetikon : Trans tech publications ltd, 2000
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ISSN |
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0255-5476 [print]
1662-9752 [online]
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Volume/pages |
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338-3(2000), p. 309-312
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ISI |
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000165996700075
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Full text (Publisher's DOI) |
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