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Epitaxial growth of -SiC on ion-beam synthesized -SiC : structural characterization
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| Abstract |
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| In this work we present for the first time, to our knowledge, the CVD epitaxial growth of beta -SiC using an ion beam synthesized (IBS) beta -SiC layer as seed, which has been formed by multiple implantation into Si wafers at 500 degreesC. The ion beam synthesized continuous layer is constituted by beta -SiC nanocrystals that are well oriented relative to the silicon substrate. Comparison of the epitaxial growth on these samples with that on silicon test samples, both on and off-axis, is performed. The results show that the epitaxial growth can be achieved on the IBS samples without the need of the carbonization step and that the structural quality of the CVD layer is comparable to that obtained on a carbonized silicon sample. Improvement of the quality of the deposited layer is proposed. |
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| Language |
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English
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| Source (journal) |
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Materials science forum. - Lausanne, 1984, currens | |
| Source (book) |
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International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA | |
| Publication |
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Zurich-uetikon : Trans tech publications ltd, 2000
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| ISSN |
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0255-5476 [print]
1662-9752 [online]
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| Volume/pages |
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338-3(2000), p. 309-312
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000165996700075
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