| Title |
|
|
|
Epitaxial growth of -SiC on ion-beam synthesized -SiC : structural characterization
| |
| Author |
|
|
|
| |
| Abstract |
|
|
| | |
| Language |
|
|
|
English
| |
| Source (journal) |
|
|
|
Materials science forum. - Lausanne, 1984, currens | |
| Source (book) |
|
|
|
International Conference on Silicon Carbide and Related Materials, OCT 10-15, 1999, RES TRIANGLE PK, NORTH CAROLINA | |
| Publication |
|
|
|
Zurich-uetikon : Trans tech publications ltd, 2000
| |
| ISSN |
|
|
|
0255-5476 [print]
1662-9752 [online]
| |
| Volume/pages |
|
|
|
338-3(2000), p. 309-312
| |
| ISI |
|
|
|
000165996700075
| |
| Full text (Publisher's DOI) |
|
|
| | |
|